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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V 0.1A 3DFN
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Bulk
- Resistors Included：R1 Only
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：2.2 kOhms
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：30 @ 20mA, 5V
- Vce Saturation (Max) @ Ib, Ic：150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max)：1µA
- Frequency - Transition：230 MHz
- Power - Max：250 mW
- Grade：Automotive
- Qualification：AEC-Q100
- Mounting Type：Surface Mount
- Package / Case：3-XFDFN
- Supplier Device Package：DFN1006B-3
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Overview
The PDTC123TMB,315 is an NPN Resistor-Equipped Transistor (RET) manufactured by Nexperia USA Inc. It features a built-in base bias resistor (R1 = 2.2 kΩ) with no emitter resistor (R2 open). The device is housed in a leadless DFN1006B-3 (SOT883B) package measuring 1.0 x 0.6 x 0.37 mm. Key electrical parameters include a collector-emitter voltage of 50 V, an output current capability of 100 mA, and a maximum power dissipation of 250 mW at 25 °C ambient temperature. The transition frequency is typically 230 MHz.
Feature Summary
- Integrates a single internal bias resistor to reduce component count and simplify circuit design.
- Qualified for automotive applications under the AEC-Q101 standard.
- Utilizes a leadless ultra-small SMD plastic package with a low profile height.
Applications
- Low-current peripheral driver
- Control of IC inputs
- Mobile applications
Procurement Notes
Verify the specific ordering suffix ',315' against official Nexperia documentation to confirm reel packaging specifications. Ensure that the AEC-Q101 qualification status aligns with the target application's reliability requirements before finalizing procurement decisions.
Selection Notes
Select this component when a compact NPN switching solution with integrated biasing is required. The DFN1006B-3 package offers space savings compared to traditional packages. Confirm that the 50 V breakdown voltage and 100 mA current limits satisfy the specific load conditions of the intended circuit design.
Part Context
This part belongs to the PDTC123 family of NPN resistor-equipped transistors. The 'TMB' designation indicates the specific DFN1006B-3 leadless package variant. The PNP complement for this device is the PDTA123TMB. This series is designed to replace general-purpose transistors in digital applications while reducing assembly costs.
Replacement Considerations
The PDTA123TMB serves as the PNP complement within the same package family. Designers requiring a complementary switching element should verify pinout compatibility if substituting within a differential or push-pull configuration.
FAQ
What is the value of the internal bias resistor?
The internal bias resistor R1 has a nominal value of 2.2 kΩ.
Is there an internal emitter resistor in this device?
No, the device specification indicates that R2 is open, meaning there is no internal emitter resistor.
What is the maximum junction temperature?
The maximum junction temperature (Tj) is 150 °C.
