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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V TO236AB
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 Only
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：2.2 kOhms
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：30 @ 20mA, 5V
- Vce Saturation (Max) @ Ib, Ic：150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max)：1µA
- Frequency - Transition：-
- Power - Max：250 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：TO-236AB
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Overview
The PDTC123TT,215 is an NPN Resistor-Equipped Transistor (RET) from the PDTC123T series, housed in a SOT23 (TO-236AB) surface-mounted device plastic package. It features a built-in input bias resistor (R1) of 2.2 kΩ with R2 left open. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, a continuous output current (IO) of 100 mA, and a peak collector current (ICM) of 100 mA for single pulses up to 1 ms. The total power dissipation (Ptot) is 250 mW at an ambient temperature of 25 °C. The junction temperature maximum is 150 °C, and the storage temperature range spans from -65 °C to +150 °C.
Feature Summary
- Built-in bias resistors simplify circuit design and reduce component count.
- Reduces pick and place costs associated with discrete transistor assembly.
- Provides 100 mA output current capability suitable for digital switching applications.
Applications
- Digital applications
- Cost-saving alternative for BC847 series in digital applications
- Control of IC inputs
- Switching loads
Procurement Notes
Verify the ordering suffix matches the required packing quantity. The '-215' suffix indicates a specific tape and reel configuration for the SOT23 package. Confirm the manufacturer's latest product status and longevity program details before finalizing procurement plans to ensure supply continuity.
Selection Notes
Select this component when a compact NPN solution with integrated base biasing is required. Ensure the 50 V collector-emitter voltage rating meets the circuit requirements. Verify that the SOT23 package dimensions fit the PCB footprint constraints and that the thermal resistance characteristics are adequate for the expected power dissipation levels.
Part Context
This part belongs to the PDTC123T series of NPN resistor-equipped transistors. It serves as the SOT23 packaged variant within the family, which also includes packages like SOT323, SOT883, and SC-75. The PNP complement for this device is the PDTA123TT.
Replacement Considerations
Direct functional substitutes within the same series include other package variants such as PDTC123TU or PDTC123TM, provided the PCB layout supports the different physical dimensions. For PNP polarity requirements, consider the PDTA123TT.
