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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V TO236AB
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR)
- Resistors Included：R1 Only
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：2.2 kOhms
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：30 @ 20mA, 5V
- Vce Saturation (Max) @ Ib, Ic：150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max)：1µA
- Frequency - Transition：-
- Power - Max：250 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：TO-236AB
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Overview
The PDTC123TT,235 is an NPN Resistor-Equipped Transistor (RET) from the PDTC123T series manufactured by Nexperia. It integrates a bias resistor R1 of 2.2 kΩ with an open R2 configuration within a SOT23 surface-mounted device plastic package. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V and an output current capability of 100 mA. The typical DC current gain (hFE) is specified at 30 under conditions of VCE = 5 V and IC = 20 mA. Total power dissipation reaches 250 mW at an ambient temperature of 25 °C, with a maximum junction temperature of 150 °C.
Feature Summary
- Integrates built-in bias resistors to simplify circuit design and reduce component count.
- Provides 100 mA output current capability for switching applications.
- Reduces pick and place costs through compact surface-mount packaging.
Applications
- Digital applications
- Cost-saving alternative for BC847 series in digital applications
- Control of IC inputs
- Switching loads
Procurement Notes
Verify the specific ordering suffix against the manufacturer's latest documentation to confirm the exact packing method and quantity. Confirm that the component status remains active for production use before initiating procurement processes.
Selection Notes
Select this component when a compact NPN transistor with integrated base biasing is required. Ensure the 50 V collector-emitter voltage rating meets the circuit requirements. Verify that the SOT23 package dimensions fit the available PCB space constraints.
Part Context
This part belongs to the PDTC123T series of NPN resistor-equipped transistors. It serves as the NPN complement to the PDTA123TT PNP variant. Both share identical internal resistor values but differ in polarity and pin configurations relative to their respective package standards.
Replacement Considerations
The PDTA123TT is the direct PNP complement within the same series. Other RETs from the PDTC123T family may be considered if package compatibility or specific resistor tolerances align with the design requirements.
FAQ
What is the value of the internal bias resistor R1?
The internal bias resistor R1 has a typical value of 2.2 kΩ, with a minimum of 1.54 kΩ and a maximum of 2.86 kΩ.
How is the R2 resistor configured in this specific model?
In the PDTC123TT model, the second bias resistor R2 is left open (unconnected).
What is the maximum total power dissipation for the SOT23 package?
The maximum total power dissipation (Ptot) for the SOT23 package is 250 mW at an ambient temperature of 25 °C.
