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The PDTC123TU,115 is an NPN Resistor-Equipped Transistor (RET) from the PDTC123T series, manufactured by Nexperia. It integrates a single NPN transistor with a built-in bias resistor R1 of 2.2 kΩ and an open R2 connection within a SOT323 (SC-70) surface-mounted device plastic package. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, a collector-base voltage (VCBO) of 50 V, an emitter-base voltage (VEBO) of 5 V, and a continuous output current (IO) of 100 mA. The total power dissipation is rated at 200 mW, with an operating temperature range spanning from -65 °C to +150 °C.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details and regional availability. Confirm that the component meets required environmental standards such as RoHS compliance before finalizing procurement orders. Ensure compatibility with existing supply chain requirements.
Select this component when a compact NPN switch with integrated base resistance is required. The SOT323 package offers space efficiency for dense PCB layouts. Verify that the 2.2 kΩ internal resistor value aligns with the target drive current and logic level interface requirements for the specific application design.
This part belongs to the PDTC123T series of NPN Resistor-Equipped Transistors. It serves as the complement to the PDTA123TU PNP variant. The series includes multiple package options such as SOT23 and SOT416, providing flexibility for different form factor constraints while maintaining consistent electrical characteristics across the family.
The PDTA123TU is the PNP complement within the same series. For direct functional substitution in complementary designs, verify pinout compatibility and ensure the PNP polarity matches the circuit requirements. No other cross-model substitutes are officially documented.