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The PDTC123YE,115 is an NPN resistor-equipped transistor (RET) from the PDTC123Y series, manufactured by Nexperia. It integrates bias resistors to simplify circuit design and reduce component count. The device features a collector-emitter voltage of 50 V and a maximum DC output current of 100 mA. The internal input bias resistor R1 has a typical value of 2.2 kΩ, with a range of 1.54 kΩ to 2.86 kΩ. The bias resistor ratio R2/R1 typically measures 4.5. It is housed in the SOT416 package (SC-75), a plastic surface-mounted package with three leads.
Verify the specific ordering suffix against the manufacturer's current product status documentation. Confirm that the SOT416 package variant matches the required footprint dimensions and pin configuration for the target PCB layout. Ensure compliance with RoHS directives as specified in the latest datasheet revision.
Select this component when a compact NPN solution with integrated base biasing is required. The SOT416 package offers a small form factor suitable for space-constrained designs. Verify that the 2.2 kΩ input resistance aligns with the driving source impedance requirements for the intended logic levels.
This part belongs to the PDTC123Y series of NPN resistor-equipped transistors. It serves as the NPN counterpart to the PDTA123YE PNP variant. The series provides standardized biasing configurations to replace discrete resistor networks in common emitter or switch applications.
The PDTA123YE is the complementary PNP device within the same series. Other packages in the PDTC123Y family, such as PDTC123YT (SOT23) or PDTC123YU (SOT323), offer different physical footprints but identical electrical characteristics.