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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V 0.1A 3DFN
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：2.2 kOhms
- Resistor - Emitter Base (R2)：10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：35 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic：150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max)：1µA
- Frequency - Transition：230 MHz
- Power - Max：250 mW
- Grade：Automotive
- Qualification：AEC-Q100
- Mounting Type：Surface Mount
- Package / Case：3-XFDFN
- Supplier Device Package：DFN1006B-3
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Overview
The PDTC123YMB,315 is an NPN Resistor-Equipped Transistor (RET) housed in a leadless DFN1006B-3 (SOT883B) package. It features built-in bias resistors with R1 at 2.2 kΩ and R2 at 10 kΩ, yielding a typical ratio of 4.5. The device supports a collector-emitter voltage (VCEO) of 50 V and an output current (IO) of 100 mA. Key electrical characteristics include a DC current gain (hFE) of 35 at IC=5 mA, a saturation voltage (VCEsat) of 150 mV at IC=10 mA, and a transition frequency (fT) of 230 MHz. It operates within a temperature range of -65 °C to +150 °C.
Feature Summary
- Integrates internal bias resistors to reduce component count and simplify circuit design.
- AEC-Q101 qualified for automotive application reliability.
- Leadless ultra-small SMD plastic package with low profile height.
Applications
- Low-current peripheral driver
- Control of IC inputs
- Mobile applications
Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details such as reel or cut tape specifications. Confirm RoHS compliance status and ensure the marking code matches the required identification standards for your assembly process before finalizing procurement orders.
Selection Notes
Select this component when a compact NPN solution with integrated base and pull-down resistors is required. Ensure the 2.2 kΩ input resistance aligns with the driving source impedance. Verify that the 50 V collector-emitter voltage rating exceeds the maximum circuit voltage under all operating conditions.
Part Context
This part belongs to the PDTC123 series of NPN resistor-equipped transistors. It serves as the complement to the PDTA123YMB PNP variant. The device is designed to replace general-purpose transistors in digital switching applications where space constraints and simplified bill-of-materials are critical design factors.
Replacement Considerations
PDTC123JMB,315
FAQ
What are the values of the built-in bias resistors?
The input bias resistor (R1) is 2.2 kΩ and the second bias resistor (R2) is 10 kΩ.
Is this component suitable for automotive use?
Yes, the PDTC123YMB is AEC-Q101 qualified for use in automotive applications.
What is the maximum collector-emitter voltage?
The maximum collector-emitter voltage (VCEO) is 50 V.
