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The PDTC123YQB-Q is a 50 V, 100 mA NPN Resistor-Equipped Transistor (RET) manufactured by Nexperia. It integrates an NPN transistor with built-in bias resistors R1 (2.2 kΩ typical) and R2 (10 kΩ typical), featuring a resistor ratio of 4.5. The device is housed in a DFN1110D-3 (SOT8015) leadless SMD plastic package with side-wettable flanks, measuring 1.1 mm x 1 mm x 0.48 mm. Key electrical limits include a collector-emitter voltage of 50 V, continuous output current of 100 mA, and total power dissipation up to 340 mW at 25 °C on a standard PCB. It operates within a junction temperature range of -55 °C to 150 °C.
Verify the specific ordering suffix matches the required packaging configuration before purchase. Confirm that the DFN1110D-3 footprint aligns with the target PCB layout constraints. Ensure the design accounts for the thermal resistance values provided in the datasheet for the intended ambient conditions. Check for any recent product change notices regarding material or manufacturing updates.
Select this component when a compact NPN switching solution with integrated base biasing is required. The low profile and side-wettable flanks facilitate automated assembly and inspection. Consider the 50 V rating and 100 mA current capability against load requirements. Verify compatibility with the target operating temperature range and thermal management strategy.
This part belongs to Nexperia's portfolio of AEC-Q101 qualified discrete semiconductors designed for automotive electronics. It serves as a cost-saving alternative to discrete resistor-transistor networks in digital circuits. The DFN1110D-3 package represents a modern, leadless form factor aimed at high-density surface-mount applications.
The PDTA123YQB-Q is the PNP complement within the same series. Designers should verify pinout compatibility if substituting with other RET families, as internal resistor values and ratios may differ significantly between manufacturers.