PDTC123YQBZ

PDTC123YQBZ

$0.03
  • Description:PDTC123YQB/SOT8015/DFN1110D-3
  • Series:-

SKU:8acf0e914ffe Category: Brand:

  
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Product Detailed Parameters

  • Description:PDTC123YQB/SOT8015/DFN1110D-3
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR)
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):2.2 kOhms
  • Resistor - Emitter Base (R2):10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:35 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max):100nA
  • Frequency - Transition:230 MHz
  • Power - Max:340 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount, Wettable Flank
  • Package / Case:3-XDFN Exposed Pad
  • Supplier Device Package:DFN1110D-3

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PDTC123YQBZ

Overview

The PDTC123YQB is a 50 V, 100 mA NPN Resistor-Equipped Transistor (RET) housed in an ultra-small DFN1110D-3 (SOT8015) leadless surface-mount package with side-wettable flanks. It integrates a 2.2 kΩ input bias resistor (R1) and a bias resistor ratio of 4.5 (R2/R1). The device features a collector-emitter voltage of 50 V, an output current capability of 100 mA, and a transition frequency of 230 MHz. Its low profile of 0.5 mm height supports automated optical inspection.

Feature Summary

  • Integrates built-in bias resistors to simplify circuit design and reduce component count.
  • Ultra-small DFN1110D-3 package with side-wettable flanks for improved solder joint visibility during AOI.
  • Low package height of 0.5 mm suitable for space-constrained applications.

Applications

  • Digital logic applications
  • Controlling IC inputs
  • Switching loads

Procurement Notes

Verify the specific ordering suffix against the manufacturer's latest documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the DFN1110D-3 footprint matches the target PCB design requirements before finalizing procurement orders.

Selection Notes

Select this component when a compact NPN transistor with integrated biasing is required for digital switching or load control. Consider the DFN1110D-3 package dimensions and thermal resistance characteristics relative to the available board space and heat dissipation capabilities of the host system.

Part Context

This part belongs to Nexperia's Resistor-Equipped Transistor (RET) portfolio, designed to replace discrete resistor-transistor networks. The PDTC123YQB serves as the NPN complement to the PDTA123YQB PNP variant, offering a standardized solution for digital interface circuits within the same product family.

Replacement Considerations

The PDTA123YQB is the documented PNP complement within the same series. Verify pinout compatibility and polarity requirements when substituting with other RET families or discrete transistor-resistor combinations.

FAQ

What is the marking code for the PDTC123YQB?

The marking code for the PDTC123YQB is QE.

What are the internal resistor values for this device?

The device includes a bias resistor R1 of 2.2 kΩ and a bias resistor ratio (R2/R1) of 4.5.

Is this component automotive qualified?

No, unless explicitly stated otherwise in the data sheet, this product is not automotive qualified and should not be used in automotive equipment beyond standard specifications.

PDTC123YQBZPDTC123YQBZ
$0.03
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