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The PDTC123YQB is a 50 V, 100 mA NPN Resistor-Equipped Transistor (RET) housed in an ultra-small DFN1110D-3 (SOT8015) leadless surface-mount package with side-wettable flanks. It integrates a 2.2 kΩ input bias resistor (R1) and a bias resistor ratio of 4.5 (R2/R1). The device features a collector-emitter voltage of 50 V, an output current capability of 100 mA, and a transition frequency of 230 MHz. Its low profile of 0.5 mm height supports automated optical inspection.
Verify the specific ordering suffix against the manufacturer's latest documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the DFN1110D-3 footprint matches the target PCB design requirements before finalizing procurement orders.
Select this component when a compact NPN transistor with integrated biasing is required for digital switching or load control. Consider the DFN1110D-3 package dimensions and thermal resistance characteristics relative to the available board space and heat dissipation capabilities of the host system.
This part belongs to Nexperia's Resistor-Equipped Transistor (RET) portfolio, designed to replace discrete resistor-transistor networks. The PDTC123YQB serves as the NPN complement to the PDTA123YQB PNP variant, offering a standardized solution for digital interface circuits within the same product family.
The PDTA123YQB is the documented PNP complement within the same series. Verify pinout compatibility and polarity requirements when substituting with other RET families or discrete transistor-resistor combinations.
The marking code for the PDTC123YQB is QE.
The device includes a bias resistor R1 of 2.2 kΩ and a bias resistor ratio (R2/R1) of 4.5.
No, unless explicitly stated otherwise in the data sheet, this product is not automotive qualified and should not be used in automotive equipment beyond standard specifications.