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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V TO236AB
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：2.2 kOhms
- Resistor - Emitter Base (R2)：10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：35 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic：150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max)：1µA
- Frequency - Transition：-
- Power - Max：250 mW
- Grade：Automotive
- Qualification：AEC-Q100
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：TO-236AB
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Overview
The PDTC123YT,215 is an NPN Resistor-Equipped Transistor (RET) manufactured by Nexperia USA Inc. in a SOT23 surface-mount package. It integrates bias resistors to simplify circuit design. Key electrical parameters include a collector-emitter voltage of 50 V and an output current of 100 mA. The internal input resistor R1 has a typical value of 2.2 kΩ, with a range of 1.54 kΩ to 2.86 kΩ. The bias resistor ratio (R2/R1) typically measures 4.5, ranging from 3.6 to 5.5. Total power dissipation is rated at 250 mW at 25 °C ambient temperature, with a maximum junction temperature of 150 °C. The device is AEC-Q101 qualified.
Feature Summary
- Built-in bias resistors reduce component count and pick-and-place costs
- AEC-Q101 qualified for automotive applications
- Simplifies circuit design through integrated resistance network
Applications
- General-purpose switching and amplification
- Inverter and interface circuits
- Circuit drivers
Procurement Notes
Verify the complete part number including the suffix ',215' to ensure correct packaging configuration. Confirm that the SOT23 package dimensions align with the target PCB footprint. Check the most recent datasheet revision to ensure compliance with current product specifications and legal disclaimers before finalizing procurement orders.
Selection Notes
Select this component when an NPN transistor with specific biasing requirements is needed without external resistors. Ensure the 50 V collector-emitter voltage rating meets the application's peak voltage demands. Verify that the 100 mA output current capability is sufficient for the load. Consider the thermal resistance characteristics if operating near the maximum junction temperature limits.
Part Context
This device belongs to the PDTC123Y series of NPN resistor-equipped transistors. The PNP complement is the PDTA123YT. Both devices share similar electrical characteristics but differ in polarity. The series is designed for cost-effective integration in digital logic and interface applications where space savings are critical.
Replacement Considerations
Direct substitutes within the same family include other variants of the PDTC123Y series with different resistor values or packages. Verify pin compatibility and electrical ratings before replacing. No other specific cross-model replacements are confirmed in the provided documentation.
