PDTC123YTR

Overview

The PDTC123YTR is an NPN Resistor-Equipped Transistor (RET) manufactured by Nexperia USA Inc. in a SOT23 surface-mount package. It integrates bias resistors R1 and R2 with nominal values of 2.2 kΩ and 10 kΩ, respectively. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and an output current (IO) of 100 mA. Total power dissipation is rated at 250 mW at 25 °C ambient temperature, with a junction temperature limit of 150 °C. The component is AEC-Q101 qualified for automotive applications.

Feature Summary

• Built-in bias resistors simplify circuit design and reduce component count
• AEC-Q101 qualified for automotive electronics reliability
• SOT23 plastic surface-mount package minimizes pick and place costs

Applications

• General-purpose switching and amplification
• Inverter and interface circuits
• Circuit drivers

Procurement Notes

Verify the specific ordering suffix to confirm packaging configuration, as the base part number denotes the electrical specification while the suffix indicates reel or cut tape quantities. Confirm RoHS compliance status through official Nexperia documentation prior to finalizing procurement orders.

Selection Notes

Select this component when a compact NPN transistor solution with integrated biasing is required. Ensure the 50 V collector-emitter voltage rating meets the application's peak operating requirements. Verify that the 100 mA output current capability aligns with the load specifications.

Part Context

This component belongs to the Nexperia PDTC123Y series of NPN resistor-equipped transistors. It serves as the NPN complement to the PDTA123YT PNP variant. The family provides standardized bias ratios for digital logic interfacing and signal conditioning tasks.

Replacement Considerations

The PDTA123YT is the PNP complement within the same series. Other RETs from the PDTC123 series may be considered if different resistor ratios are acceptable, provided pinouts and voltage ratings match.