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The PDTC123YU,115 is an NPN Resistor-Equipped Transistor (RET) housed in a SOT323 (SC-70) surface-mounted package. It integrates bias resistors R1 and R2 with a single NPN transistor to simplify circuit design. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, a DC output current (IO) of 100 mA, and a total power dissipation (Ptot) of 200 mW at 25 °C ambient temperature. The input bias resistor R1 has a typical value of 2.2 kΩ, while the bias resistor ratio (R2/R1) typically equals 4.5.
Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details such as tape width and reel quantity. Ensure the device version matches the required production status. Cross-reference the marking code to validate authenticity and manufacturing origin before integration into supply chains.
Select this component when a compact NPN solution with integrated base biasing is required. The SOT323 package offers space efficiency for high-density PCB layouts. Verify that the 50 V collector-emitter voltage and 100 mA continuous current ratings align with the target application's electrical stress requirements.
This part belongs to the PDTC123Y series of NPN Resistor-Equipped Transistors manufactured by Nexperia. The series includes variants with different packages such as SOT416, SOT346, and SOT883. The PDTC123YU specifically utilizes the SOT323 form factor, providing a standardized footprint for surface-mount assembly processes.
Direct functional equivalents within the same family include PDTA123YU for PNP configurations. Other package variants like PDTC123YT or PDTC123YE offer identical electrical characteristics but require footprint adaptation.