PDTC124EK,115

Overview

The PDTC124EK,115 is an NPN resistor-equipped transistor from the PDTC124E series manufactured by NXP Semiconductors. It integrates bias resistors R1 and R2, both typically 22 kΩ, to simplify circuit design. The device operates with a maximum collector-emitter voltage (VCEO) of 50 V and a DC output current (IO) of 100 mA. It is housed in the SOT346 (SC-59) surface-mount package. Key electrical characteristics include a minimum DC current gain (hFE) of 60 at IC = 5 mA, a collector-emitter saturation voltage (VCEsat) of 150 mV max at IC = 10 mA, and a total power dissipation (Ptot) of 250 mW at Tamb ≤ 25 °C.

Feature Summary

• Built-in bias resistors for simplified circuit design
• Reduction of component count and pick and place costs

Applications

• General purpose switching and amplification
• Inverter and interface circuits
• Circuit driver

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select the PDTC124EK variant when the SC-59 (SOT346) package form factor is required for the PCB layout. Ensure the application stays within the 50 V collector-emitter voltage limit and 100 mA DC output current constraints. Verify thermal management requirements against the 250 mW power dissipation rating at ambient temperatures up to 25 °C.

Part Context

This component belongs to the PDTC124E series of NPN resistor-equipped transistors. The series includes complementary PNP types like the PDTA124E. Variants differ primarily by package type, such as SOT23, SOT323, or TO-92, while maintaining identical internal resistor values and core electrical specifications across the family.

Replacement Considerations

Direct functional substitutes within the same series include PDTC124ET (SOT23), PDTC124EU (SOT323), and PDTC124EM (SOT883). These share the same electrical parameters but require footprint adaptation due to different package dimensions.