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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V TO92-3
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Box (TB)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：22 kOhms
- Resistor - Emitter Base (R2)：22 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic：150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max)：1µA
- Frequency - Transition：-
- Power - Max：500 mW
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package：TO-92-3
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Overview
The PDTC124ES,126 is an NPN resistor-equipped transistor from the PDTC124E series manufactured by NXP Semiconductors. It integrates two bias resistors with a typical value of 22 kΩ each (R1 and R2). The device features a collector-emitter voltage (VCEO) rating of 50 V and a maximum DC output current (IO) of 100 mA. It utilizes a SOT54 (TO-92) plastic single-ended leaded package. Key electrical characteristics include a minimum DC current gain (hFE) of 60 at IC = 5 mA, a collector-emitter saturation voltage (VCEsat) of 150 mV max at IC = 10 mA, and a total power dissipation (Ptot) of 500 mW at Tamb ≤ 25 °C.
Feature Summary
- Built-in bias resistors for simplified circuit design
- Reduction of component count on printed circuit boards
- Reduced pick and place costs during assembly
Applications
- General purpose switching and amplification
- Inverter and interface circuits
- Circuit driver applications
Procurement Notes
Verify the specific ordering suffix to confirm the exact package type and manufacturing origin. The datasheet indicates that suffixes such as 'p' denote Hong Kong production, 't' denotes Malaysia, and 'W' denotes China. Ensure the selected variant matches the required mechanical footprint and thermal performance specifications for the target application environment.
Selection Notes
Select this component when a compact NPN solution with integrated base biasing is required. The SOT54 package is suitable for through-hole mounting. Consider the 50 V collector-emitter voltage and 100 mA continuous current limits. Verify that the 500 mW power dissipation capability in the TO-92 package meets the thermal requirements of the specific operating conditions.
Part Context
The PDTC124ES belongs to the PDTC124E series of NPN resistor-equipped transistors. This series includes various package options such as surface-mount types like SOT416, SOT323, and SOT883. The ES designation specifically identifies the SOT54 (TO-92) leaded package variant within this broader family of pre-biased semiconductor devices.
Replacement Considerations
Direct functional equivalents within the same series include PDTA124ES (PNP complement). Other package variants like PDTC124EE or PDTC124EK offer identical electrical characteristics but require different board layouts due to distinct physical footprints.
