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The PDTC124ET,235 is an NPN Resistor-Equipped Transistor (RET) manufactured by Nexperia USA Inc. It integrates a single NPN transistor with built-in bias resistors R1 and R2, both nominally 22 kΩ, into a SOT23 (TO-236AB) surface-mount package. The device supports a maximum collector-emitter voltage of 50 V and a continuous output current of 100 mA. Key electrical characteristics include a minimum DC current gain (hFE) of 60 at 5 mA, a typical transition frequency of 230 MHz, and a total power dissipation of 250 mW. The component operates within an ambient temperature range of -65 °C to +150 °C.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details and availability status. Confirm that the product data sheet version matches the required revision history for your design. Ensure compliance with RoHS directives and check for any export control regulations applicable to the region. Validate the marking code on received components against the datasheet specifications.
Select this component when a compact NPN solution with integrated biasing is required for digital switching or input control. The SOT23 package offers space efficiency compared to discrete resistor-transistor combinations. Consider the 50 V voltage rating and 100 mA current capability for load requirements. Verify thermal performance constraints based on the PCB footprint and ambient operating conditions.
The PDTC124ET belongs to Nexperia's family of Resistor-Equipped Transistors (RETs). It serves as the NPN counterpart to the PDTA124ET PNP device. This component is designed as a non-automotive qualified part; automotive applications require the -Q variant. It replaces discrete resistor networks in general-purpose digital logic and signal conditioning circuits.
The PDTA124ET is the PNP complement. For automotive-grade requirements, consider the PDTC124ET-QR. Discrete alternatives like the BC847 series may require additional external resistors.