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The PDTC124TT,215 is an NPN resistor-equipped transistor from the PDTC124T series manufactured by Nexperia. It integrates a single bias resistor (R1) of 22 kΩ with an open R2 configuration within a SOT23 surface-mount package. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, a DC output current (IO) of 100 mA, and a peak collector current (ICM) of 100 mA. The device operates within a temperature range of -65 °C to +150 °C, with a maximum junction temperature of 150 °C and total power dissipation of 250 mW at 25 °C ambient.
Verify the specific ordering suffix
Select this component for applications requiring a single NPN digital transistor with a 22 kΩ input resistor in a compact SOT23 footprint. Ensure the required collector-emitter voltage does not exceed 50 V and the continuous current remains within 100 mA limits. Consider thermal resistance characteristics if operating near maximum temperature ratings.
This part belongs to the PDTC124T series of NPN resistor-equipped transistors. The 'TT' designation indicates the SOT23 package variant, while ',215' specifies the tape and reel packaging format. Complementary PNP versions are available within the same product family.
Direct replacements include other PDTC124T series variants such as PDTC124TU or PDTC124TK if package compatibility allows. Verify pinout configurations, as different packages may have varying pin assignments for base, collector, and emitter terminals.
The internal bias resistor (R1) has a typical value of 22 kΩ.
No, the R2 terminal is open; only the base bias resistor R1 is integrated.
The total power dissipation (Ptot) is 250 mW at an ambient temperature of 25 °C.