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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V 0.1A 3DFN
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：22 kOhms
- Resistor - Emitter Base (R2)：47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 5A, 5V
- Vce Saturation (Max) @ Ib, Ic：150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max)：1µA
- Frequency - Transition：230 MHz
- Power - Max：250 mW
- Grade：Automotive
- Qualification：AEC-Q100
- Mounting Type：Surface Mount
- Package / Case：3-XFDFN
- Supplier Device Package：DFN1006B-3
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Overview
The PDTC124XMB,315 is an NPN Resistor-Equipped Transistor (RET) manufactured by Nexperia USA Inc. It integrates a single transistor with built-in bias resistors R1 (22 kΩ typical) and R2 (47 kΩ typical), resulting in a resistor ratio of 2.13. The device operates within a collector-emitter voltage range up to 50 V and supports an output current capability of 100 mA. It is housed in a leadless DFN1006B-3 (SOT883B) plastic package measuring 1.0 x 0.6 x 0.37 mm. The component is qualified to the AEC-Q101 standard for automotive applications and functions across an ambient temperature range of -65 °C to +150 °C.
Feature Summary
- Integrates built-in bias resistors to reduce component count and simplify circuit design.
- Qualified to AEC-Q101 standards for use in automotive applications.
- Features a leadless ultra-small SMD plastic package with low profile height.
Applications
- Low-current peripheral driver
- Control of IC inputs
- Mobile applications
Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to ensure correct packaging configuration. Confirm that the DFN1006B-3 footprint matches the target PCB layout requirements. Ensure compliance with RoHS directives as specified in the product data sheet before finalizing procurement orders.
Selection Notes
Select this component when space constraints require a leadless package and integrated biasing is desired. Compare the 22 kΩ input resistance against circuit drive requirements. Verify thermal dissipation limits relative to the expected operating environment and PCB copper area availability.
Part Context
This part belongs to the PDTC124 series of NPN resistor-equipped transistors from Nexperia. It serves as the complement to the PDTA124XMB PNP variant. The series is designed to replace general-purpose transistors in digital switching applications while minimizing board space and assembly complexity.
Replacement Considerations
PDTC124WM,315
FAQ
What are the values of the built-in bias resistors?
The internal bias resistors consist of R1 at 22 kΩ and R2 at 47 kΩ, yielding a typical ratio of 2.13.
Is this component suitable for automotive electronics?
Yes, the PDTC124XMB is qualified in accordance with the AEC-Q101 standard for discrete semiconductors.
What is the maximum collector-emitter voltage rating?
The absolute maximum collector-emitter voltage (VCEO) with an open base is rated at 50 V.
