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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V 0.1A 3DFN
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：22 kOhms
- Resistor - Emitter Base (R2)：47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic：100mV @ 500µA, 10mA
- Current - Collector Cutoff (Max)：100nA
- Frequency - Transition：230 MHz
- Power - Max：340 mW
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount, Wettable Flank
- Package / Case：3-XDFN Exposed Pad
- Supplier Device Package：DFN1110D-3
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Overview
The PDTC124XQB-QZ is an NPN Resistor-Equipped Transistor (RET) from Nexperia, designed for digital applications. It features a built-in bias resistor network with R1 at 22 kΩ and R2 at 47 kΩ. The device supports a maximum collector-emitter voltage of 50 V and a continuous output current of 100 mA. It is housed in an ultra-small DFN1110D-3 (SOT8015) leadless surface-mount package with side-wettable flanks, measuring 1.1 x 1.0 x 0.48 mm. Qualified to AEC-Q101 standards, it operates within a junction temperature range up to 150 °C.
Feature Summary
- Integrated bias resistors simplify circuit design by reducing component count and pick-and-place costs.
- Ultra-thin package height of 0.5 mm facilitates use in space-constrained designs.
- Side-wettable flanks enable Automatic Optical Inspection (AOI) of solder joints for quality assurance.
Applications
- Digital logic applications
- Controlling IC inputs
- Switching loads
Procurement Notes
Verify the specific ordering suffix 'Z' against the official datasheet to confirm packaging details, as standard listings may reference bulk or tape-and-reel formats without explicit suffix notation. Confirm the manufacturer source directly through Nexperia or authorized distributors to ensure authenticity. Check the latest product status to verify production availability before finalizing procurement plans.
Selection Notes
Select this component when a compact NPN switching solution with integrated base biasing is required. The 22 kΩ input resistor value suits applications needing moderate drive currents. Ensure the PCB footprint matches the SOT8015 outline dimensions. Consider thermal derating curves if operating near the maximum ambient temperature limits defined in the datasheet.
Part Context
This part belongs to the PDTC143X/123J/143Z/114Y/124XQB-Q series of 50 V, 100 mA NPN resistor-equipped transistors. It serves as a cost-saving alternative to discrete transistor-resistor combinations like the BC847-Q series. The PNP complement for this device is the PDTA124XQB-Q.
Replacement Considerations
The PDTA124XQB-Q is the direct PNP complement within the same series. For general replacements, other RETs from the same family such as PDTC143XQB-Q or PDTC123JQB-Q may be considered if their specific resistor ratios align with the design requirements.
FAQ
What are the values of the internal bias resistors?
The internal bias resistor R1 (input/base) is 22 kΩ, and R2 (base/emitter) is 47 kΩ.
Is this component suitable for automotive applications?
Yes, the PDTC124XQB-Q is qualified according to the AEC-Q101 standard and is recommended for use in automotive applications.
What is the maximum collector-emitter voltage?
The maximum collector-emitter voltage (VCEO) is 50 V.
