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The PDTC124XQB is an NPN Resistor-Equipped Transistor (RET) from Nexperia, housed in a DFN1110D-3 (SOT8015) leadless package. It features built-in bias resistors with nominal values of R1 = 22 kΩ and R2 = 47 kΩ. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, a maximum output current (IO) of 100 mA, and a DC current gain (hFE) minimum of 80 at IC = 5 mA. The device supports a junction temperature up to 150 °C and offers low thermal resistance for efficient heat dissipation.
Verify the specific ordering code against the manufacturer's latest documentation to ensure correct resistor ratios and package variants. Confirm RoHS compliance status and check for any recent product change notices (PCN) that may affect assembly or testing locations. Ensure compatibility with standard reflow soldering profiles for the SOT8015 footprint.
Select this component when space constraints necessitate a leadless package with verified solder joint inspection capabilities. The integrated 22 kΩ/47 kΩ resistor network simplifies biasing for NPN switching applications. Consider the 50 V breakdown voltage and 100 mA current limit to ensure adequate headroom for the target load conditions.
This part belongs to the PDTC143X/123J/143Z/114Y/124XQB series, which shares the same ultra-small DFN1110D-3 package but varies in internal resistor values. It serves as the NPN counterpart to the PDTA124XQB PNP device within the same family, offering consistent mechanical dimensions for mixed-polarity designs.
Direct substitutes include other PDTC124XQB units from Nexperia. Alternative RETs with similar 22 kΩ/47 kΩ ratios in SOT8015 packages may be considered if pinout and electrical characteristics match exactly. Verify thermal resistance and package height compatibility before substitution.