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The PDTC124XT,215 is an NPN Resistor-Equipped Transistor (RET) from the PDTC124X series, housed in a SOT23 surface-mounted package. It integrates bias resistors R1 and R2 with typical values of 22 kΩ and 47 kΩ respectively, yielding a ratio of 2.1. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, an output current (IO) of 100 mA, and a total power dissipation (Ptot) of 250 mW at 25 °C ambient temperature. The device features a DC current gain (hFE) minimum of 80 at IC = 5 mA and VCE = 5 V.
Verify the specific ordering suffix to confirm the tape and reel packaging configuration required for automated assembly. Confirm that the SOT23 package variant matches the footprint constraints of the target printed-circuit board design before finalizing procurement orders.
Select this component when a compact NPN transistor solution with integrated base biasing is required. Ensure the 50 V collector-emitter voltage rating and 100 mA continuous current capability align with the load requirements of the intended application circuit.
This part belongs to the PDTC124X family of NPN resistor-equipped transistors. Complementary PNP variants are available within the same series, such as the PDTA124XT, which shares identical physical dimensions and pinout configurations for balanced design flexibility.
PDTC124XE,215
The typical internal bias resistor R1 is 22 kΩ and R2 is 47 kΩ.
The total power dissipation is 250 mW when mounted on an FR4 PCB at an ambient temperature of 25 °C.