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The PDTC124XU,115 is an NPN Resistor-Equipped Transistor (RET) housed in the SOT323 surface-mount package. It integrates a single NPN transistor with built-in bias resistors: R1 at 22 kΩ and R2 at 47 kΩ. The device supports a maximum collector-emitter voltage of 50 V and a continuous output current of 100 mA. Total power dissipation is rated at 200 mW. Operating characteristics include a DC current gain minimum of 80 and a saturation voltage of 150 mV at 10 mA. The component functions within an ambient temperature range of -65 °C to +150 °C.
Verify the specific ordering suffix against official Nexperia documentation to confirm the exact packing method and reel specifications required for production. Confirm RoHS compliance status through the manufacturer's latest product data sheet before finalizing procurement orders.
Select this component when a compact NPN switching solution with integrated base biasing is required. Ensure the 50 V collector-emitter voltage rating meets the circuit requirements. Verify that the SOT323 package dimensions align with the available footprint on the target printed circuit board layout.
This part belongs to the PDTC124X series of NPN resistor-equipped transistors. The series includes variants in different packages such as SOT23, SC-75, and TO-92. The PDTC124XU specifically utilizes the SOT323 form factor, which corresponds to the JEITA SC-70 standard for small surface-mount applications.
Direct functional substitutes within the same series include PDTC124XT (SOT23) and PDTC124XE (SC-75). These alternatives share identical electrical parameters but require different physical footprints on the printed circuit board.
The device contains a built-in input bias resistor (R1) of 22 kΩ and an emitter-base bias resistor (R2) of 47 kΩ.
The maximum total power dissipation is 200 mW when the ambient temperature is 25 °C or lower.
Yes, the PDTA124XU is the complementary PNP type within the same series.