PDTC143EK,115

PDTC143EK,115

  • Description:TRANS PREBIAS NPN 50V 0.1A SMT3
  • Series:-

SKU:d595a713c030 Category: Brand:

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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V 0.1A SMT3
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR)
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):4.7 kOhms
  • Resistor - Emitter Base (R2):4.7 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max):1µA
  • Frequency - Transition:-
  • Power - Max:250 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SMT3; MPAK

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PDTC143EK,115

Overview

The PDTC143EK,115 is an NPN resistor-equipped transistor from the PDTC143E series manufactured by NXP Semiconductors. It integrates a base bias resistor (R1) of 4.7 kΩ and an emitter-base resistor (R2) of 4.7 kΩ within a single SOT346 (SC-59A) plastic surface-mounted package. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a DC output current (IO) of 100 mA. Key electrical characteristics include a minimum DC current gain (hFE) of 30 at IC = 10 mA, a collector-emitter saturation voltage (VCEsat) of 150 mV max at IC = 10 mA, and a thermal resistance (Rth(j-a)) of 500 K/W in free air.

Feature Summary

  • Integrates built-in bias resistors to simplify circuit design and reduce component count.
  • Reduces pick and place costs associated with discrete resistor networks.
  • Provides general-purpose switching and amplification capabilities.

Applications

  • General purpose switching
  • Amplification circuits
  • Inverter and interface circuits
  • Circuit driver applications

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm the exact package variant and manufacturing origin. Ensure that the selected component meets the required thermal dissipation limits for the intended operating ambient temperature range. Confirm compliance with RoHS directives and other relevant regulatory standards applicable to the target market before finalizing procurement specifications.

Selection Notes

Select this component when space constraints require integrating biasing resistors directly into the transistor package. The SOT346 package offers a compact footprint suitable for surface-mount assembly. Evaluate the total power dissipation requirements against the thermal resistance values provided in the datasheet to ensure reliable operation under maximum load conditions without exceeding junction temperature limits.

Part Context

This part belongs to the PDTC143E series of NPN resistor-equipped transistors. The series includes various package options such as SOT23, SOT323, and SOT883, all featuring identical internal resistor ratios of R1/R2 = 1. The PDTC143EK specifically utilizes the SOT346 outline, providing a standardized solution for applications requiring simplified biasing networks in small form factors.

Replacement Considerations

Compatible PNP complements within the same series include the PDTA143EK. Other packages in the PDTC143E family, such as PDTC143ET or PDTC143EU, offer equivalent electrical performance but differ in physical dimensions and pinout configurations. Verify mechanical compatibility before substituting with alternative package variants.

FAQ

What are the values of the integrated bias resistors?

The PDTC143EK features a base bias resistor (R1) of 4.7 kΩ and an emitter-base resistor (R2) of 4.7 kΩ, resulting in a resistor ratio of 1.

What is the maximum collector-emitter voltage rating?

The maximum collector-emitter voltage (VCEO) is rated at 50 V.

What is the thermal resistance in free air?

The thermal resistance from junction to ambient (Rth(j-a)) in free air is 500 K/W for the SOT346 package.

PDTC143EK,115PDTC143EK,115

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