PDTC143EM,315

Overview

The PDTC143EM,315 is an NPN Resistor-Equipped Transistor (RET) manufactured by Nexperia USA Inc. It integrates a transistor with built-in bias resistors in a leadless DFN1006-3 (SOT883) package measuring 1 mm x 0.6 mm x 0.48 mm. The device supports a collector-emitter voltage of 50 V and a continuous output current of 100 mA. Internal resistor values are typically 4.7 kΩ for R1 (input) and 4.7 kΩ for R2, yielding a ratio of 1. Key electrical characteristics include a DC current gain of 30 at 10 mA, a transition frequency of 230 MHz, and a total power dissipation of 250 mW at 25 °C ambient temperature. It operates within a junction temperature range up to 150 °C.

Feature Summary

• AEC-Q101 qualified for automotive applications
• Integrated bias resistors simplify circuit design
• Leadless ultra-small SMD plastic package

Applications

• Digital applications in automotive and industrial segments
• Controlling IC inputs
• Switching loads

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component when space constraints require a leadless package like DFN1006-3. Ensure the application requires an NPN configuration with a 4.7 kΩ input resistor. Verify that the thermal resistance of 500 K/W in free air meets the system's heat dissipation requirements without excessive PCB copper area.

Part Context

This part belongs to the PDTC143E series of NPN resistor-equipped transistors. It serves as the complement to the PDTA143EM PNP variant. The device replaces discrete transistor and resistor combinations, reducing component count and pick-and-place costs in digital switching circuits.

Replacement Considerations

Direct functional substitutes within the same package include other NPN RETs with similar 50V/100mA ratings and 4.7kΩ bias resistors, such as the BC847 series equivalents if pinout compatibility allows. Verify package dimensions and marking codes before substitution.