PDTC143EMB,315

Overview

The PDTC143EMB,315 is an NPN Resistor-Equipped Transistor (RET) manufactured by Nexperia. It integrates a single NPN transistor with built-in bias resistors in a leadless ultra-small SOT883B (DFN1006B-3) plastic package measuring 1.0 x 0.6 x 0.37 mm. The device features a collector-emitter voltage (VCEO) of 50 V and a continuous output current capability of 100 mA. Internal resistor values include R1 at 4.7 kΩ and R2 at 4.7 kΩ, yielding a typical R2/R1 ratio of 1. It operates within an ambient temperature range of -65 °C to +150 °C and has a maximum junction temperature of 150 °C. The component is qualified under the AEC-Q101 standard for automotive applications.

Feature Summary

• Integrates NPN transistor with built-in bias resistors to reduce component count
• Leadless ultra-small SMD plastic package with low profile height
• AEC-Q101 qualified for automotive reliability standards

Applications

• Low-current peripheral driver
• Control of IC inputs
• Replaces general-purpose transistors in digital applications
• Mobile applications

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this RET when space constraints require a compact DFN1006B-3 footprint. Ensure the 50 V collector-emitter rating meets circuit requirements. Verify that the integrated 4.7 kΩ input resistor aligns with drive source capabilities. Confirm thermal management strategies are adequate given the small package size and power dissipation limits.

Part Context

This component belongs to the PDTC143 series of NPN resistor-equipped transistors. It serves as the complement to the PDTA143EMB PNP variant. The series is designed to simplify digital switching circuits by combining transistor and resistor functions into a single surface-mount device, reducing assembly complexity and board area.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation.