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The PDTC143EQAZ is an NPN Resistor-Equipped Transistor (RET) from the PDTC143/114/124/144EQA series, manufactured by Nexperia USA Inc. It features a collector-emitter voltage (VCEO) of 50 V and an output current capability of 100 mA. The device integrates bias resistors R1 and R2, both specified at 4.7 kΩ. Packaged in a leadless DFN1010D-3 (SOT1215) plastic surface-mount package with visible solderable side pads, it measures 1.1 x 1.0 x 0.37 mm. Key electrical characteristics include a DC current gain (hFE) minimum of 30 at IC = 10 mA and VCE = 5 V, a transition frequency (fT) typical value of 230 MHz, and a maximum total power dissipation of 280 mW at 25 °C ambient temperature.
Verify the specific ordering suffix to confirm packaging details such as reel or cut tape configuration. Confirm RoHS compliance status and ensure the supplier provides valid traceability documentation. Check for any recent Product Change Notices (PCN) regarding assembly sites or material updates before finalizing procurement orders.
Select this component when a compact NPN switching solution with integrated base biasing is required. Ensure the application current does not exceed 100 mA and voltage stays within 50 V limits. Consider the thermal resistance values if operating near maximum power dissipation. Verify that the 4.7 kΩ resistor values align with the target drive current requirements.
This part belongs to the PDTC143/114/124/144EQA family of 50 V, 100 mA NPN resistor-equipped transistors. The 'EQAZ' suffix typically denotes specific packaging or marking variations within the DFN1010D-3 form factor. It serves as a cost-saving alternative to discrete transistor and resistor combinations in digital logic interfaces.
Direct functional substitutes within the same series include PDTC114EQA, PDTC124EQA, and PDTC144EQA, which share identical packages but differ in internal resistor values. PNP complements like PDTA143EQA are available for complementary logic configurations.