PDTC143ES,126

Overview

The PDTC143ES,126 is an NPN resistor-equipped transistor from the PDTC143E series manufactured by NXP Semiconductors. It integrates a base bias resistor (R1) and a base-emitter resistor (R2), both nominally 4.7 kΩ with a ratio of 1. The device is housed in a plastic single-ended leaded through-hole package designated as SOT54 (TO-92). Key electrical limits include a collector-emitter voltage (VCEO) of 50 V, a continuous DC output current (IO) of 100 mA, and a total power dissipation of 500 mW at 25 °C ambient temperature. The junction temperature can reach up to 150 °C.

Feature Summary

• Built-in bias resistors simplify circuit design and reduce component count
• Reduces pick and place costs for manufacturing processes
• Suitable for general purpose switching and amplification applications

Applications

• General purpose switching and amplification
• Inverter and interface circuits
• Circuit driver

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select the PDTC143ES variant when a through-hole TO-92 package is required for prototyping or low-volume assembly. Ensure the 50 V collector-emitter voltage and 100 mA current ratings align with the load requirements. Verify that the integrated 4.7 kΩ bias network meets the drive specifications compared to discrete resistor solutions.

Part Context

This component belongs to the PDTC143E series of NPN resistor-equipped transistors. The series includes various packages such as SOT23, SOT323, and SOT883. The 'ES' designation specifically identifies the SOT54 (TO-92) through-hole package configuration within this family.

Replacement Considerations

Direct replacements within the same series include PDTC143ET (SOT23) and PDTC143EU (SOT323) for surface mount alternatives. For through-hole needs, verify pinout compatibility with other SOT54 variants if available.