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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V TO236AB
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：4.7 kOhms
- Resistor - Emitter Base (R2)：4.7 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：30 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic：150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max)：1µA
- Frequency - Transition：-
- Power - Max：250 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：TO-236AB
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Overview
The PDTC143ET,215 is an NPN Resistor-Equipped Transistor (RET) manufactured by Nexperia USA Inc. It integrates a single NPN transistor with built-in bias resistors in a SOT-23 surface-mount package. The device features a collector-emitter voltage of 50 V and a continuous output current capability of 100 mA. Internal resistor values are specified as R1 = 4.7 kΩ and R2 = 4.7 kΩ, resulting in a nominal bias resistor ratio of 1. Key electrical characteristics include a DC current gain (hFE) of 30 at IC = 10 mA and a transition frequency (fT) of 230 MHz. The component operates within a junction temperature range of -65 °C to +150 °C.
Feature Summary
- Integrates an NPN transistor with built-in bias resistors to simplify circuit design.
- Reduces printed-circuit board space requirements and component count.
- Offers cost-saving potential through reduced pick-and-place operations.
Applications
- Digital applications in industrial segments
- Controlling integrated circuit inputs
- Switching loads
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component for designs requiring a compact NPN switching solution with integrated base biasing. The fixed 4.7 kΩ input resistor simplifies drive calculations. Ensure the application voltage does not exceed the 50 V collector-emitter rating and that the load current remains within the 100 mA limit. Consider the thermal resistance of 500 K/W in free air when evaluating power dissipation constraints.
Part Context
This part belongs to the Nexperia PDTC143E series of resistor-equipped transistors. It serves as the NPN counterpart to the PDTA143ET PNP device. The product data sheet indicates it is a non-automotive qualified product, distinct from automotive-grade variants which carry a -Q suffix. It replaces discrete resistor networks in general-purpose digital logic interfaces.
Replacement Considerations
The PDTA143ET is the documented PNP complement. For direct NPN replacement, verify pinout compatibility with existing SOT-23 footprints. No other specific substitute part numbers are confirmed in the provided documentation.
FAQ
What are the internal resistor values for the PDTC143ET?
The datasheet specifies a typical input bias resistor (R1) of 4.7 kΩ and a feedback bias resistor (R2) of 4.7 kΩ.
Is the PDTC143ET suitable for automotive applications?
No, the revision history explicitly states the product was changed to non-automotive. Automotive versions require the -Q suffix.
What is the maximum total power dissipation?
The maximum total power dissipation is 250 mW at an ambient temperature of 25 °C or lower.
