PDTC143TM,315

Overview

The PDTC143TM,315 is an NPN resistor-equipped transistor manufactured by Nexperia USA Inc. It features a built-in bias resistor (R1) of 4.7 kΩ with R2 left open. The device is housed in a leadless ultra-small plastic SOT883 package (DFN-1006-3). Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 50 V and a continuous DC output current (IO) of 100 mA. Total power dissipation is rated at 250 mW at 25 °C ambient temperature. The junction temperature range extends from -65 °C to +150 °C.

Feature Summary

• Integrates a single internal bias resistor to simplify circuit design and reduce component count.
• Utilizes a compact leadless surface-mount package for automated pick-and-place assembly efficiency.

Applications

• General purpose switching and amplification
• Inverter and interface circuits
• Circuit driver applications

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component when a compact NPN digital transistor with a 4.7 kΩ base resistor is required. Ensure the SOT883 footprint matches the PCB layout constraints. Verify that the 50 V collector-emitter voltage rating meets the circuit's maximum operating conditions.

Part Context

This part belongs to the PDTC143T series of NPN resistor-equipped transistors. It serves as the NPN complement to the PDTA143TM PNP variant. The series is designed to replace discrete resistor-transistor networks in space-constrained designs.

Replacement Considerations

Direct functional substitutes within the same series include the PDTA143TM (PNP complement). Other packages in the series like PDTC143TT or PDTC143TU offer different form factors but identical electrical characteristics.