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The PDTC143XMB,315 is an NPN Resistor-Equipped Transistor (RET) manufactured by Nexperia. It integrates a transistor with built-in bias resistors in a leadless ultra-small SOT883B (DFN1006B-3) plastic package measuring 1.0 x 0.6 x 0.37 mm. The device features a collector-emitter voltage (VCEO) of 50 V and an output current capability of 100 mA. Internal resistor R1 has a typical value of 4.7 kΩ, while the R2/R1 ratio is typically 2.1. It operates within an ambient temperature range of -65 °C to +150 °C and is qualified to AEC-Q101 standards for automotive applications.
Verify the specific ordering suffix
Select this component when space constraints require a leadless package like DFN1006B-3. Ensure the required input resistance matches the internal 4.7 kΩ value. Confirm that the 50 V collector-emitter voltage rating meets the circuit's maximum operating conditions. Verify thermal management requirements against the 250 mW power dissipation limit at 25 °C ambient temperature.
This part belongs to the PDTC143 series of NPN resistor-equipped transistors. It serves as the complement to the PDTA143XMB PNP variant. The product line was originally developed under NXP Semiconductors before the business transitioned to Nexperia in 2017. The datasheet retains original NXP branding in some sections.
Public confirmed substitute part numbers are not available in the provided documentation.