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The PDTC143XQA is a 50 V, 100 mA NPN Resistor-Equipped Transistor (RET) housed in a leadless DFN1010D-3 (SOT1215) package with visible solderable side pads. It integrates an NPN transistor with built-in bias resistors: R1 is typically 4.7 kΩ and R2 is typically 10 kΩ. The device features a collector-emitter voltage of 50 V, output current capability of 100 mA, and total power dissipation up to 280 mW at 25°C on a standard footprint. It operates within a junction temperature range of -55°C to +150°C and is qualified under AEC-Q101 standards.
Verify the manufacturer origin, as the datasheet is published by Nexperia while the input brand lists NXP USA Inc. Confirm the specific suffix 'QA' corresponds to the AEC-Q101 qualified version in the DFN1010D-3 package. Ensure compatibility with the required marking code '11 01' for production identification.
Select this RET when a compact NPN switch with integrated base drive is needed. The 4.7 kΩ input resistor suits moderate drive currents. Verify that the 50 V collector-emitter rating meets the circuit's maximum voltage stress. Consider the low thermal resistance on multi-layer PCBs for high-power density designs.
This component belongs to the PDTC143X/123J/143Z/114YQA family of 50 V NPN resistor-equipped transistors. All variants share the same DFN1010D-3 package and general electrical characteristics but differ in internal bias resistor values. The PDTC143XQA specifically pairs a 4.7 kΩ R1 with a 10 kΩ R2.
Public confirmed substitutes include PDTA143XQA (PNP complement). Other family members like PDTC123JQA or PDTC143ZQA are pin-compatible but have different resistor ratios.