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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V 0.1A 3DFN
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：4.7 kOhms
- Resistor - Emitter Base (R2)：10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：50 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic：100mV @ 500µA, 10mA
- Current - Collector Cutoff (Max)：100nA
- Frequency - Transition：230 MHz
- Power - Max：340 mW
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount, Wettable Flank
- Package / Case：3-XDFN Exposed Pad
- Supplier Device Package：DFN1110D-3
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Overview
The PDTC143XQB-Q is an NPN Resistor-Equipped Transistor (RET) from Nexperia, housed in a DFN1110D-3 (SOT8015) leadless package with side-wettable flanks. It features built-in bias resistors R1 of 4.7 kΩ and R2 of 10 kΩ. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, continuous output current (IO) of 100 mA, and total power dissipation (Ptot) up to 340 mW at 25 °C on a 35 μm copper PCB. The device operates within an ambient temperature range of -55 °C to +150 °C and has a junction temperature limit of 150 °C.
Feature Summary
- Built-in bias resistors simplify circuit design and reduce component count
- Qualified according to AEC-Q101 for automotive applications
- Ultra-small package height of 0.5 mm suitable for space-constrained designs
- Side-wettable flanks facilitate Automatic Optical Inspection (AOI)
Applications
- Digital switching applications
- Controlling IC inputs
- Switching loads
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct package and reel specifications. Confirm that the procurement channel provides valid traceability records. Ensure compliance with RoHS directives as indicated in the product data sheet before finalizing purchase orders.
Selection Notes
Select this component when a compact NPN transistor with integrated base and pull-down resistors is required. The 4.7 kΩ input resistor and 10 kΩ emitter resistor ratio define the drive characteristics. Consider the DFN1110D-3 package dimensions and thermal resistance values for PCB layout and heat dissipation planning.
Part Context
This part belongs to the Nexperia QB-Q series of resistor-equipped transistors designed for automotive and industrial digital logic interfaces. It serves as a cost-saving alternative to discrete BJT and resistor combinations, offering reduced pick-and-place costs while maintaining high reliability standards through AEC-Q101 qualification.
Replacement Considerations
Direct replacements within the same family include PDTC123JQB-Q, PDTC143ZQB-Q, PDTC114YQB-Q, and PDTC124XQB-Q, which share the SOT8015 package but differ in internal resistor values.
