SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The PDTC143ZE,115 is an NPN Resistor-Equipped Transistor (RET) manufactured by Nexperia in the SOT416 (SC-75) surface-mounted package. It integrates a single transistor with built-in bias resistors: R1 (input/base) is typically 4.7 kΩ and R2 (emitter-base) creates a ratio of 10 relative to R1. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, continuous output current (IO) of 100 mA, and total power dissipation (Ptot) of 150 mW at 25 °C ambient temperature. The device operates within a junction temperature range of -65 °C to +150 °C.
Verify the specific ordering suffix matches the required packaging configuration. Confirm that the manufacturer designation aligns with current corporate branding, as product lines may transition between entities. Ensure the component status is active before finalizing procurement plans.
Select this component when a compact NPN switching solution with integrated base biasing is required. The SOT416 package offers a small footprint suitable for space-constrained designs. Verify thermal constraints against the 150 mW dissipation limit for the specific package variant.
This part belongs to the PDTC143Z series of NPN resistor-equipped transistors. The 'ZE' suffix specifically identifies the SOT416 (SC-75) plastic surface-mounted package with three leads. Other series members utilize different packages such as SOT883 or SOT323.
PDTC143ZT (SOT23 package)
The input resistor R1 is typically 4.7 kΩ, and the emitter-base resistor R2 results in a typical R2/R1 ratio of 10.
Yes, the product has been qualified in accordance with the AEC-Q101 standard for discrete semiconductors.
The maximum collector-emitter voltage (VCEO) with an open base is 50 V.