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Product Detailed Parameters
- Description：TRANS PREBIAS
- Series：*
- Mfr：Nexperia USA Inc.
- Package：Bulk
- Resistors Included：-
- Transistor Type：-
- Current - Collector (Ic) (Max)：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Resistor - Base (R1)：-
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- Frequency - Transition：-
- Power - Max：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
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Overview
The PDTC143ZMB is an NPN Resistor-Equipped Transistor (RET) housed in a leadless ultra-small SOT883B (DFN1006B-3) plastic package. It integrates bias resistors to simplify circuit design and reduce component count. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, an output current capability of 100 mA, and a typical input resistor (R1) of 4.7 kΩ with a ratio of R2/R1 at 10. The device operates within an ambient temperature range of -65 °C to +150 °C and features a low package height of 0.37 mm.
Feature Summary
- AEC-Q101 qualified for automotive applications
- Built-in bias resistors reduce component count and pick-and-place costs
- Leadless ultra-small SMD plastic package with low profile
- Simplifies circuit design for digital applications
Applications
- Low-current peripheral driver
- Control of IC inputs
- Replaces general-purpose transistors in digital applications
- Mobile applications
Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details such as reel or cut tape configuration. Ensure compatibility with AEC-Q101 requirements if deploying in automotive environments. Cross-reference pin assignments and marking codes during PCB layout to prevent installation errors. Confirm thermal resistance values match the intended PCB footprint and copper area specifications.
Selection Notes
Select this component when space constraints require a leadless DFN package with a height under 0.4 mm. Choose the PDTC143ZMB over discrete transistor-resistor combinations to minimize board area and assembly steps. Verify that the 50 V collector-emitter voltage rating exceeds the maximum operating voltage of the target circuit. Ensure the 100 mA output current capability meets the load requirements for the intended switching application.
Part Context
This part belongs to the NPN Resistor-Equipped Transistor family from Nexperia. It serves as the complement to the PDTA143ZMB PNP variant. The device utilizes the SOT883B package designation, also known as DFN1006B-3, which provides a compact solution for high-density surface-mount designs. It is designed for use in computing, consumer, and wearable markets alongside automotive sectors.
Replacement Considerations
The PNP complement is the PDTA143ZMB. For direct replacement in existing designs, verify that the substitute maintains the same SOT883B footprint and pinout configuration. Ensure any alternative RET devices offer comparable VCEO ratings and integrated resistor values to maintain circuit stability.
