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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V 0.1A 3DFN
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：4.7 kOhms
- Resistor - Emitter Base (R2)：47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic：100mV @ 250µA, 5mA
- Current - Collector Cutoff (Max)：100nA
- Frequency - Transition：230 MHz
- Power - Max：340 mW
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount, Wettable Flank
- Package / Case：3-XDFN Exposed Pad
- Supplier Device Package：DFN1110D-3
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Overview
The PDTC143ZQB-QZ is an NPN Resistor-Equipped Transistor (RET) from Nexperia, housed in a DFN1110D-3 (SOT8015) leadless package. It features built-in bias resistors R1 of 4.7 kΩ and R2 of 47 kΩ. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, a continuous output current (IO) of 100 mA, and a total power dissipation (Ptot) of 340 mW at 25 °C on a standard FR4 PCB. The device operates within an ambient temperature range of -55 °C to +150 °C and has a junction temperature limit of 150 °C.
Feature Summary
- Built-in bias resistors simplify circuit design and reduce component count.
- Ultra-small DFN1110D-3 package with side-wettable flanks for improved solder joint inspection.
- Qualified according to AEC-Q101 standards for automotive applications.
- Low package height of 0.5 mm suitable for space-constrained designs.
Applications
- Digital applications
- Controlling IC inputs
- Switching loads
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the DFN1110D-3 footprint matches your PCB layout requirements. Check for any recent Product Change Notices (PCN) regarding manufacturing site or material updates before finalizing procurement orders.
Selection Notes
Select this component when a compact NPN switching solution with integrated base biasing is required. The 4.7 kΩ input resistor provides a specific drive characteristic distinct from other RET variants. Ensure the application voltage does not exceed the 50 V collector-emitter rating and that thermal management accommodates the 340 mW dissipation limit on the target PCB copper area.
Part Context
This part belongs to the Nexperia PDTC143X/123J/143Z/114Y/124XQB-Q series, which shares the same SOT8015 package but varies in internal resistor values. It serves as the NPN complement to the PDTA143ZQB-Q PNP device. The 'Q' suffix indicates AEC-Q101 qualification, while 'B' denotes the specific DFN1110D-3 package variant with side-wettable flanks.
Replacement Considerations
Direct functional substitutes within the same package include PDTC143XQB-QZ and PDTC123JQB-QZ, provided their internal resistor ratios match the circuit requirements. For pin-compatible alternatives without integrated resistors, discrete BJT combinations must be evaluated for size and performance equivalence.
