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The PDTC143ZQB is an NPN Resistor-Equipped Transistor (RET) from Nexperia, housed in a DFN1110D-3 (SOT8015) leadless package. It features built-in bias resistors: R1 is 4.7 kΩ and R2 is 47 kΩ. The device supports a collector-emitter voltage (VCEO) of 50 V and a continuous output current (IO) of 100 mA. Key electrical characteristics include a DC current gain (hFE) of at least 100 at IC = 10 mA, a collector-emitter saturation voltage (VCEsat) of 100 mV max at IC = 5 mA, and a transition frequency (fT) of 230 MHz typical. Thermal resistance (Rth j-a) ranges from 298 to 368 K/W depending on PCB copper thickness.
Verify the specific ordering suffix matches the required tape-and-reel or cut-tape packaging configuration. Confirm that the DFN1110D-3 footprint aligns with the target PCB stencil design. Ensure the selected variant meets all thermal dissipation requirements for the intended ambient temperature range.
Select this part when a compact NPN switch with integrated base biasing is required. The 4.7 kΩ input resistor suits standard logic drive levels. Compare against other RET variants in the series if different resistor ratios are needed for specific voltage divider applications.
This component belongs to the PDTC143X/123J/143Z/114Y/124XQB series, which shares the same SOT8015 package and general electrical ratings but varies in internal resistor values. It serves as a digital transistor alternative to discrete BJT configurations.
PDTC143XQB offers a 10 kΩ R2 value. PDTA143ZQB is the PNP complement. Other series members like PDTC123JQB or PDTC114YQB provide different R1/R2 ratios while maintaining identical package and voltage ratings.