PDTC144EMB,315

Overview

The PDTC144EMB,315 is an NPN Resistor-Equipped Transistor (RET) manufactured by Nexperia USA Inc. It integrates a transistor with built-in bias resistors in a leadless ultra-small SOT883B (DFN1006B-3) plastic package measuring 1.0 x 0.6 x 0.37 mm. The device features a collector-emitter voltage of 50 V and an output current capability of 100 mA. Internal resistor R1 is nominally 47 kΩ, with a typical R2/R1 ratio of 1. Operating temperatures range from -65 °C to +150 °C. The component is AEC-Q101 qualified for automotive applications.

Feature Summary

• Integrates bias resistors to reduce component count and simplify circuit design
• Leadless ultra-small surface-mount package minimizes footprint
• Qualified for automotive applications under AEC-Q101 standards

Applications

• Low-current peripheral driver
• Control of IC inputs
• Mobile applications

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this NPN RET when space constraints require a compact DFN1006B-3 package. Ensure the 50 V collector-emitter rating and 100 mA continuous current meet the load requirements. Verify that the integrated 47 kΩ input resistor aligns with the logic drive levels. Confirm thermal management capabilities within the target ambient temperature range.

Part Context

This component belongs to the PDTC144 series of NPN resistor-equipped transistors. It serves as the complement to the PDTA144EMB PNP variant. Both devices utilize the same SOT883B leadless package to provide standardized switching solutions for digital logic interfacing and signal conditioning tasks.

Replacement Considerations

Direct functional substitutes include the PDTA144EMB for PNP configurations or other RETs with matching 47 kΩ bias ratios. Verify pinout compatibility and package dimensions before substitution.