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The PDTC144EQAZ is an NPN Resistor-Equipped Transistor (RET) from Nexperia, housed in a leadless DFN1010D-3 (SOT1215) package. It features built-in bias resistors R1 and R2, both with a nominal value of 47 kΩ. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous output current (IO) of 100 mA. Key electrical characteristics include a DC current gain (hFE) minimum of 80 at IC=10mA and VCE=5V, a collector-emitter saturation voltage (VCEsat) max of 150 mV at IC=10mA, and a transition frequency (fT) typical of 230 MHz. Total power dissipation is rated at 280 mW at 25°C ambient temperature.
Verify the complete part number including the trailing suffix to ensure correct packaging configuration. Confirm RoHS compliance status and moisture sensitivity level requirements against specific project constraints before finalizing procurement orders.
Select this component when a high input impedance is required due to the 47 kΩ base resistor. Ensure the application current remains within the 100 mA limit and verify thermal management capabilities for the DFN1010D-3 package under expected operating conditions.
This part belongs to the PDTC143/114/124/144EQA series, which shares identical physical dimensions and pinout configurations. The primary distinction among series members lies in the resistance values of the integrated bias resistors, allowing designers to choose appropriate drive characteristics without changing the footprint.
Direct functional substitutes within the same package include PDTC143EQAZ, PDTC114EQAZ, and PDTC124EQAZ, provided the different internal resistor values are acceptable for the circuit design.