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The PDTC144ET/DG/B2,21 is an NPN Resistor-Equipped Transistor (RET) from the PDTC144E series, housed in a SOT23 plastic surface-mounted package. It integrates bias resistors with R1 = 47 kΩ and R2 = 47 kΩ. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, output current capability of 100 mA, and DC current gain (hFE) minimum of 80 at IC = 5 mA. The device operates within a junction temperature range of -65 °C to +150 °C and features a total power dissipation of 250 mW.
Verify the specific ordering suffix against official Nexperia documentation to confirm package type and packing method. Ensure compatibility with reflow soldering processes as specified in the datasheet. Confirm RoHS compliance status through the manufacturer's latest product data sheet before procurement.
Select this component for designs requiring compact NPN switching with integrated base biasing. The SOT23 package suits space-constrained PCB layouts. Verify that the 50 V rating and 100 mA current capacity meet the specific load requirements of the target application circuit.
This part belongs to the Nexperia PDTC144E series of NPN resistor-equipped transistors. The series includes variants in different packages such as SOT416, SOT883, and SOT323. The PDTC144ET variant specifically utilizes the standard SOT23 footprint, offering a balance between size and thermal performance.
PDTC144EE, PDTC144EM, PDTC144EU