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Product Detailed Parameters
- Description：TRANS PREBIAS
- Series：*
- Mfr：Nexperia USA Inc.
- Package：Bulk
- Resistors Included：-
- Transistor Type：-
- Current - Collector (Ic) (Max)：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Resistor - Base (R1)：-
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- Frequency - Transition：-
- Power - Max：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
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Overview
The PDTC144TMB is an NPN Resistor-Equipped Transistor (RET) housed in a leadless DFN1006B-3 (SOT883B) surface-mounted package. It integrates a 47 kΩ input bias resistor with the collector-base open configuration. Key electrical parameters include a maximum collector-emitter voltage of 50 V and an output current capability of 100 mA. The device features a typical DC current gain of 100 at 1 mA collector current and a transition frequency of 230 MHz. Thermal resistance from junction to ambient is typically 500 K/W, with a total power dissipation limit of 250 mW at 25 °C ambient temperature.
Feature Summary
- Integrates built-in bias resistors to reduce component count and simplify circuit design
- AEC-Q101 qualified for automotive application suitability
- Leadless ultra-small SMD plastic package with low profile height
Applications
- Low-current peripheral driver
- Control of IC inputs
- Replaces general-purpose transistors in digital applications
- Mobile applications
Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details such as reel size or tape dimensions. Ensure the procurement request matches the exact part number PDTC144TMB,315 to avoid discrepancies in supply chain logistics. Confirm that the supplier provides traceability data consistent with AEC-Q101 qualification requirements for automotive-grade components.
Selection Notes
Select this component when space constraints require a leadless ultra-small package like DFN1006B-3. Choose this RET over discrete transistor-resistor combinations to minimize board area and assembly costs. Verify that the required input impedance aligns with the integrated 47 kΩ bias resistor value. Ensure the application operates within the 50 V collector-emitter voltage limit and 100 mA current capability.
Part Context
This NPN RET is the complement to the PDTA144TMB PNP variant. Both devices share identical physical packaging and thermal characteristics but differ in semiconductor polarity. The PDTC series is designed to replace standard general-purpose NPN transistors in digital switching applications where fixed biasing is sufficient.
Replacement Considerations
Publicly confirmed substitute part numbers are not provided in the source document. Cross-referencing requires independent verification of pinout compatibility, electrical limits, and package dimensions against alternative manufacturers' datasheets.
