PDTC144WE,115

Overview

The PDTC144WE,115 is an NPN resistor-equipped transistor from the PDTC144W series manufactured by NXP Semiconductors. It integrates bias resistors R1 (typical 47 kΩ) and R2 (typical 22 kΩ) within a single SC-75 (SOT416) plastic surface-mounted package. The device supports a maximum collector-emitter voltage of 50 V and a DC output current of 100 mA. Total power dissipation is rated at 150 mW at 25 °C ambient temperature. The component features a junction-to-ambient thermal resistance of 833 K/W in free air.

Feature Summary

• Integrates built-in bias resistors to simplify circuit design
• Reduces overall component count on printed circuit boards
• Minimizes pick and place manufacturing costs

Applications

• General purpose switching and amplification
• Inverter and interface circuits
• Circuit driver applications

Procurement Notes

Verify the specific ordering suffix against official NXP documentation to confirm the exact package variant and manufacturing origin. Confirm that the SC-75 (SOT416) footprint matches the target PCB layout requirements before finalizing procurement decisions.

Selection Notes

Select this component when space constraints require integrated biasing for NPN switching tasks. Ensure the required base drive current aligns with the internal 47 kΩ resistor value. Verify that the 150 mW power dissipation rating accommodates the expected operating conditions without exceeding thermal limits.

Part Context

This part belongs to the PDTC144W series of NPN resistor-equipped transistors. It serves as the complementary counterpart to the PDTA144WE PNP device. The series provides standardized bias ratios for common logic interface applications across various surface-mount packages.

Replacement Considerations

Direct functional substitutes include other PDTC144W series variants such as PDTC144WT or PDTC144WU if package compatibility allows. Cross-manufacturer equivalents must be verified for matching resistor values and pin configurations.