SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The PDTC144WK,115 is an NPN resistor-equipped transistor from the PDTC144W series manufactured by NXP Semiconductors. It integrates a base bias resistor (R1) of 47 kΩ and an emitter-base resistor (R2) of 22 kΩ within a single SOT346 (SC-59) plastic surface-mounted package. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a DC output current (IO) of 100 mA. Key electrical characteristics include a minimum DC current gain (hFE) of 60 at IC = 5 mA, a collector-emitter saturation voltage (VCEsat) of 150 mV at IC = 10 mA, and a typical input-off voltage (Vi(off)) of 1.7 V.
Verify the specific ordering suffix
Select the PDTC144WK variant when the SC-59 (SOT346) surface-mount footprint is required for board space constraints. Ensure the 47 kΩ / 22 kΩ internal resistor ratio aligns with the target logic levels and drive requirements. Verify that the 50 V collector-emitter voltage rating exceeds the maximum operating voltage of the application circuit.
The PDTC144WK belongs to the broader PDTC144W series of NPN resistor-equipped transistors. This family includes multiple package options such as SOT23, SOT323, and TO-92, all sharing identical internal electrical characteristics but differing in physical dimensions and thermal dissipation capabilities. The series is designed to replace discrete resistor networks in standard transistor configurations.
Direct functional substitutes within the same series include PDTC144WE (SOT416), PDTC144WEF (SOT490), PDTC144WM (SOT883), and PDTC144WS (SOT54). These parts share the same R1/R2 values and electrical ratings but require different PCB footprints. PNP complements are available as PDTA144WK.
Pin 1 is the Base, Pin 2 is the Emitter, and Pin 3 is the Collector.
The internal bias resistor R1 is 47 kΩ and the emitter-base resistor R2 is 22 kΩ.
For the SOT346 package, the maximum total power dissipation is 250 mW at an ambient temperature of 25 °C.