PDTD113EQAZ

Overview

The PDTD113EQAZ is an NPN Resistor-Equipped Transistor (RET) in a DFN1010D-3 (SOT1215) package. It features a collector-emitter voltage of 50 V and an output current capability of 500 mA. The device integrates bias resistors R1 and R2, both specified at 1 kΩ with ±10% tolerance. Key electrical parameters include a DC current gain (hFE) minimum of 33 at 50 mA and 5 V, and a collector-emitter saturation voltage maximum of 100 mV at 50 mA. The component operates within a junction temperature range of -55 °C to 150 °C and is qualified under AEC-Q101 standards for automotive reliability.

Feature Summary

• Integrates built-in bias resistors to simplify circuit design and reduce component count
• Features a leadless ultra-small DFN1010D-3 package with visible solderable side pads
• Supports Automatic Optical Inspection (AOI) for enhanced manufacturing quality control
• Qualified for automotive applications according to AEC-Q101 stress test standards

Applications

• Digital applications requiring simplified switching logic
• Controlling IC inputs with integrated base drive
• Cost-saving alternative to discrete BC807/BC817 series transistors
• Switching loads in space-constrained designs

Procurement Notes

Verify the specific suffix 'Z' against the official Nexperia datasheet to confirm packaging details, as standard listings may reference reel or tape configurations without explicit suffix documentation. Ensure the ordering code matches the required DFN1010D-3 variant. Cross-reference the marking code '01 00 11' for visual identification during incoming inspection. Confirm AEC-Q101 qualification status if automotive grade compliance is mandatory for the target application.

Selection Notes

Select this RET when a compact NPN solution with integrated base resistance is required. The 1 kΩ internal resistors eliminate external biasing components, reducing board space. Verify that the 500 mA current rating and 50 V breakdown voltage meet the load requirements. Consider the low profile of 0.37 mm for height-sensitive assemblies. Ensure thermal management aligns with the specified power dissipation limits on the target PCB footprint.

Part Context

This component belongs to the PDTD113EQA series of 50 V, 500 mA NPN resistor-equipped transistors. It shares the DFN1010D-3 package with variants featuring different resistor values, such as PDTD123EQA (2.2 kΩ) and PDTD143EQA (4.7 kΩ). The series is designed to replace general-purpose transistors in digital circuits while offering reduced pick-and-place costs and simplified assembly processes through integrated biasing.

Replacement Considerations

Direct substitutes include other PDTD113EQA series members with identical pinouts but different resistor ratios. For legacy replacements, verify compatibility with BC817-series equivalents, noting the integrated resistor advantage. Ensure any replacement maintains the DFN1010D-3 footprint and AEC-Q101 qualification if automotive use is intended.