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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V TO236AB
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：500 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：1 kOhms
- Resistor - Emitter Base (R2)：1 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：33 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：250 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：TO-236AB
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Overview
The PDTD113ET,215 is an NPN Resistor-Equipped Transistor (RET) from the PDTD113E series, manufactured by Nexperia USA Inc. It features a built-in bias resistor network with R1 = 1 kΩ and R2 = 1 kΩ, housed in a SOT23 (TO-236AB) surface-mount package. The device supports a maximum collector-emitter voltage of 50 V and a continuous output current of 500 mA. Key electrical characteristics include a DC current gain (hFE) of at least 33 at IC=50mA/VCE=5V, a collector-emitter saturation voltage of 300 mV max at IC=50mA/IB=2.5mA, and a total power dissipation of 250 mW. The component is RoHS compliant and suitable for digital applications.
Feature Summary
- Built-in bias resistors simplify circuit design and reduce component count
- ±10% resistor ratio tolerance ensures consistent performance
- Low thermal resistance facilitates efficient heat dissipation in compact packages
Applications
- Digital applications in automotive and industrial segments
- Cost-saving alternative to BC817 series in digital applications
- Controlling IC inputs
- Switching loads
Procurement Notes
Verify the specific ordering suffix against the manufacturer's latest documentation to ensure correct packaging and marking codes. Confirm that the SOT23 package variant matches the required footprint for PCB layout. Check for any recent product change notices regarding material or assembly updates before finalizing procurement specifications.
Selection Notes
Select this component when a compact NPN transistor with integrated base and emitter resistors is required for space-constrained designs. Ensure the 50 V voltage rating and 500 mA current capability meet the load requirements. Consider the 250 mW power dissipation limit and ambient temperature conditions to verify thermal performance within the SOT23 package constraints.
Part Context
This part belongs to the PDTD113E series of NPN resistor-equipped transistors. It is the SOT23 package variant of the PDTD113ET type number. The series also includes variants in SC-59A (SOT346) and SC-43A (SOT54) packages. The PNP complement for this series is the PDTB113 family.
Replacement Considerations
Direct functional substitutes within the same series include PDTD113EK (SOT346 package) and PDTD113ES (SOT54 package), provided the physical footprint allows for package adaptation. Verify pinout compatibility when substituting between different package types.
