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The PDTD113EU-QF is an NPN Resistor-Equipped Transistor (RET) from Nexperia, designed for surface-mount applications in the SOT323 (SC-70) plastic package. It integrates a single NPN silicon transistor with built-in bias resistors to simplify circuit design and reduce component count. The device supports a collector current of 500 mA and withstands a collector-emitter voltage of 50 V. Key electrical parameters include a base resistor (R1) of 1 kOhm and an emitter resistor (R2) of 1 kOhm, both with ±10% tolerance. It features a DC current gain (hFE) of at least 33 at 50 mA and 5 V, with a maximum saturation voltage of 300 mV under specified conditions.
Verify the specific suffix 'QF' against official Nexperia documentation to confirm automotive grade status and exact pinout configuration. Ensure compatibility with SOT323 footprint requirements during PCB layout. Cross-reference datasheet revisions to confirm resistor tolerances and thermal characteristics match design specifications before finalizing procurement.
Select this component when space constraints require integrated biasing solutions in small packages. The SOT323 form factor suits high-density designs. Verify that the 500 mA current rating and 50 V breakdown voltage meet circuit demands. Consider the ±10% resistor tolerance for precision biasing needs. Confirm automotive qualification requirements align with the QF suffix designation.
This part belongs to the PDTD1xxU series of NPN resistor-equipped transistors. It serves as the complement to PDTB1xxU PNP variants. The series is engineered for digital switching applications where simplified bias networks reduce assembly complexity. The QF suffix typically denotes automotive-grade qualification within Nexperia's portfolio structure.
PDTB113ZU is the PNP complement. PDTD113EU is the standard commercial variant without automotive qualification. Verify pinout compatibility with SC-70/SOT323 footprints when substituting.