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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V SOT323
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：500 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：1 kOhms
- Resistor - Emitter Base (R2)：1 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：33 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic：100mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：225 MHz
- Power - Max：300 mW
- Grade：Automotive
- Qualification：AEC-Q100
- Mounting Type：Surface Mount
- Package / Case：SC-70, SOT-323
- Supplier Device Package：SOT-323
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Overview
The PDTD113EUX is an NPN Resistor-Equipped Transistor (RET) from the PDTD1xxxU series, housed in a SOT323 (SC-70) plastic surface-mounted package. It features built-in bias resistors: R1 (input) is nominally 1 kΩ and R2 (base-emitter) is nominally 1 kΩ. The device supports a collector-emitter voltage (VCEO) of 50 V and an output current (IO) of 500 mA. Key electrical characteristics include a DC current gain (hFE) minimum of 33 at IC=50mA/VCE=5V, a collector-emitter saturation voltage (VCEsat) maximum of 100 mV at IC=50mA/IB=2.5mA, and a transition frequency (fT) typical value of 225 MHz. Total power dissipation reaches 300 mW in free air.
Feature Summary
- Integrates input and base-emitter bias resistors to simplify circuit design and reduce component count.
- AEC-Q101 qualified for automotive applications with high temperature capability up to 175 °C.
- Provides ±10% resistor ratio tolerance for consistent performance.
Applications
- Controlling IC inputs
- Switching loads
- Cost-saving alternative to BC807 or BC817 series transistors in digital applications
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as reel size or tape width. Confirm RoHS compliance status and ensure the selected variant matches the required marking code for assembly identification. Cross-reference the full part number with distributor catalogs to validate availability and lead times prior to procurement.
Selection Notes
Select this component when a compact NPN switching solution with integrated biasing is required. Ensure the 50 V collector-emitter voltage rating meets the application's peak voltage requirements. Verify that the 1 kΩ internal resistor values provide appropriate base drive currents for the intended load conditions without exceeding the total power dissipation limits under worst-case thermal scenarios.
Part Context
The PDTD113EUX belongs to the PDTD1xxxU family of NPN resistor-equipped transistors manufactured by Nexperia USA Inc. This series utilizes the SOT323 (SC-70) package to offer a small footprint suitable for space-constrained designs. The 'EU' suffix typically denotes the standard tape and reel packaging configuration within this product line.
Replacement Considerations
PDTB113EU (PNP complement)
FAQ
What are the nominal values for the built-in bias resistors?
For the PDTD113EUX, both the input bias resistor (R1) and the base-emitter bias resistor (R2) have a nominal value of 1 kΩ.
Is this component qualified for automotive use?
Yes, the PDTD1xxxU series, including the PDTD113EUX, is AEC-Q101 qualified and suitable for use in automotive applications.
What is the maximum collector-emitter voltage rating?
The maximum collector-emitter voltage (VCEO) with an open base is rated at 50 V.
