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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V 0.5A SMT3
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：500 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：1 kOhms
- Resistor - Emitter Base (R2)：10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：70 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：250 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SMT3; MPAK
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Overview
The PDTD113ZK,115 is an NPN Resistor-Equipped Transistor (RET) manufactured by Nexperia USA Inc. It integrates a 1 kΩ input bias resistor and a 10 kΩ emitter-base resistor within a compact SOT23 surface-mount package. The device supports a maximum collector-emitter voltage of 50 V and an output current capability of 500 mA. Key electrical characteristics include a DC current gain (hFE) of at least 70 at 50 mA, a collector-emitter saturation voltage of 300 mV max, and a total power dissipation of 250 mW. The component operates with a junction temperature range up to 150 °C.
Feature Summary
- Built-in bias resistors reduce component count and simplify circuit design
- ± 10% resistor ratio tolerance ensures consistent performance
- High temperature applications support up to 175 °C
Applications
- Digital application in automotive and industrial segments
- Cost-saving alternative for BC817 series in digital applications
- Controlling IC inputs
- Switching loads
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm package type and tape/reel specifications. Confirm RoHS compliance status and check for any recent product change notices or obsolescence warnings directly from the supplier before finalizing procurement plans.
Selection Notes
Select this component when a compact NPN transistor solution with integrated biasing is required for space-constrained designs. Ensure the 500 mA current rating and 50 V voltage limits align with the target load requirements. Verify that the non-automotive qualification meets the project's environmental standards.
Part Context
This part belongs to the PDTD113ZT series of NPN resistor-equipped transistors. It serves as the NPN counterpart to the PDTB113ZT PNP variant. The device is designed to replace discrete resistor-transistor combinations, offering a simplified footprint and reduced assembly complexity for general-purpose switching tasks.
Replacement Considerations
Public confirmed substitute part numbers: PDTA113ZT (PNP complement).
FAQ
Is the PDTD113ZK,115 automotive qualified?
No, the standard PDTD113ZT series is not automotive qualified. Automotive-grade alternatives are available separately.
What is the typical value of the built-in bias resistor R1?
The typical value of the input bias resistor R1 is 1 kΩ, with a specified range of 0.7 kΩ to 1.3 kΩ.
What is the maximum junction temperature for this device?
The maximum junction temperature (Tj) is 150 °C.
