PDTD113ZS,126

Overview

The PDTD113ZS,126 is an NPN Resistor-Equipped Transistor (RET) manufactured by Nexperia. It integrates a 50 V collector-emitter voltage rating and a 500 mA output current capability within a SOT23 surface-mounted package. The device includes built-in bias resistors with R1 at 1 kΩ and R2 at 10 kΩ, featuring a ±10% resistor ratio tolerance. Key electrical characteristics include a DC current gain of 70 at 50 mA and a maximum power dissipation of 250 mW.

Feature Summary

• Built-in bias resistors reduce component count and simplify circuit design
• 500 mA output current capability for switching loads
• ±10% resistor ratio tolerance ensures consistent performance

Applications

• Digital applications in automotive and industrial segments
• Cost-saving alternative for BC817 series in digital applications
• Controlling IC inputs
• Switching loads

Procurement Notes

Verify the specific ordering suffix to confirm packaging details such as tape and reel specifications or cut tape options. Confirm RoHS compliance status and ensure the non-automotive qualification aligns with your application requirements before finalizing procurement orders.

Selection Notes

Select this component when a compact NPN transistor solution with integrated biasing is required. Ensure the 50 V voltage rating and 500 mA current capacity meet the load requirements. Verify that the SOT23 package dimensions fit the available PCB space and that the thermal resistance characteristics are suitable for the operating environment.

Part Context

This part belongs to the PDTD113ZT family of NPN resistor-equipped transistors. It serves as a direct replacement for discrete BJT configurations requiring external base resistors. The PNP complement for this device is the PDTB113ZT series.

Replacement Considerations

PDTD113ZT is the primary equivalent part number. PDTB113ZT is the PNP complement. Verify pinout compatibility and electrical ratings against existing designs.