PDTD113ZT-QR

Overview

The PDTD113ZT-Q is an NPN Resistor-Equipped Transistor (RET) manufactured by Nexperia, housed in a SOT23 surface-mounted plastic package. It integrates bias resistors to simplify circuit design and reduce component count. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, an output current (IO) capability of 500 mA, and a total power dissipation (Ptot) of 250 mW at temperatures up to 25 °C. The internal resistor R1 (input) has a nominal value of 1 kΩ with a tolerance range of 0.7 to 1.3 kΩ, while the R2/R1 bias resistor ratio is nominally 10, ranging from 9 to 11. The device features a DC current gain (hFE) of at least 70 at IC = 50 mA and VCE = 5 V.

Feature Summary

• Built-in bias resistors that reduce component count and simplify circuit design.
• Qualified according to AEC-Q101 for use in automotive applications.
• ± 10% resistor ratio tolerance ensures consistent performance.

Applications

• Digital applications in automotive and industrial segments
• Cost-saving alternative for BC817 series in digital applications
• Controlling IC inputs
• Switching loads

Procurement Notes

Verify the specific ordering suffix matches the required packaging configuration before procurement. Confirm that the AEC-Q101 qualification aligns with target automotive reliability standards. Ensure the SOT23 footprint dimensions are compatible with existing PCB layouts. Check for any recent product change notifications regarding marking codes or manufacturing sites.

Selection Notes

Select this component when a compact NPN switching solution with integrated base biasing is required. The 500 mA current rating suits moderate load switching tasks. Verify that the 50 V collector-emitter voltage exceeds the maximum operating voltage of the application. Consider the thermal resistance characteristics if operating in high ambient temperature environments without adequate PCB copper area.

Part Context

This part belongs to the PDTD113ZT-Q family of NPN resistor-equipped transistors. It serves as the complement to the PDTB113ZT-Q PNP variant. Both devices share similar electrical characteristics but differ in polarity. They are designed to replace discrete transistor and resistor combinations in space-constrained designs.

Replacement Considerations

The PDTB113ZT-Q is the PNP complement within the same series. For direct replacement in circuits requiring opposite polarity, verify pinout compatibility and ensure the PNP device meets the same voltage and current requirements.

FAQ

What is the nominal value of the built-in input bias resistor?

The nominal value of the input bias resistor (R1) is 1 kΩ, with an allowable range of 0.7 kΩ to 1.3 kΩ.

Is this component suitable for automotive applications?

Yes, the PDTD113ZT-Q is qualified according to the AEC-Q101 standard and is recommended for use in automotive applications.

What is the maximum collector-emitter voltage?

The maximum collector-emitter voltage (VCEO) is 50 V.