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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V TO236AB
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：500 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：1 kOhms
- Resistor - Emitter Base (R2)：10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：70 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：250 mW
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：TO-236AB
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Overview
The PDTD113ZT-Q is an NPN Resistor-Equipped Transistor (RET) manufactured by Nexperia USA Inc. It integrates a single NPN transistor with built-in bias resistors in a SOT23 surface-mount package. The device supports a collector-emitter voltage of 50 V and an output current of 500 mA. Internal resistance values include R1 at 1 kΩ and R2 at 10 kΩ, with a resistor ratio tolerance of ±10%. Thermal characteristics specify a junction-to-ambient thermal resistance of 500 K/W and a maximum power dissipation of 250 mW. The component is qualified according to AEC-Q101 standards for automotive applications.
Feature Summary
- Built-in bias resistors reduce component count and simplify circuit design
- Qualified according to AEC-Q101 for automotive applications
- ±10% resistor ratio tolerance ensures consistent performance
Applications
- Digital applications in automotive and industrial segments
- Cost-saving alternative for BC817 series in digital applications
- Controlling IC inputs
- Switching loads
Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details and manufacturing site codes. Ensure compliance with RoHS directives and check the most recent product data sheet for any updates to the AEC-Q101 qualification status before finalizing procurement specifications.
Selection Notes
Select this component when a compact NPN switching solution with integrated biasing is required. The SOT23 package suits space-constrained designs. Verify that the 50 V collector-emitter voltage and 500 mA current ratings align with the target application's electrical requirements and thermal management capabilities.
Part Context
This part belongs to the PDTD113 series of NPN resistor-equipped transistors from Nexperia. It serves as the NPN counterpart to the PDTB113ZT PNP variant. The QVL suffix indicates specific automotive qualification and packaging attributes defined by the manufacturer.
Replacement Considerations
Direct substitutes within the same family include the PDTB113ZT for PNP functionality. Other compatible RETs may be considered if pinout compatibility and electrical ratings match the original design constraints.
FAQ
What are the internal resistor values for the PDTD113ZT-Q?
The device includes a base bias resistor (R1) of 1 kΩ and an emitter bias resistor (R2) of 10 kΩ.
Is the PDTD113ZT-Q suitable for automotive use?
Yes, the product has been qualified according to the AEC-Q101 standard and is recommended for use in automotive applications.
What is the maximum power dissipation of the PDTD113ZT-Q?
The total power dissipation is rated at 250 mW when the ambient temperature is less than or equal to 25 °C.
