PDTD113ZT,215

PDTD113ZT,215

$0.22
  • Description:TRANS PREBIAS NPN 50V TO236AB
  • Series:-

SKU:80eb87c85c27 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V TO236AB
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):500 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):1 kOhms
  • Resistor - Emitter Base (R2):10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:250 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:TO-236AB

Download product information

PDTD113ZT,215

Overview

The PDTD113ZT is an NPN Resistor-Equipped Transistor (RET) manufactured by Nexperia USA Inc. It integrates a transistor with built-in bias resistors in a SOT23 surface-mounted package. Key electrical parameters include a collector-emitter voltage of 50 V, an output current capability of 500 mA, and a total power dissipation of 250 mW. The internal resistor configuration consists of R1 at 1 kΩ and R2 at 10 kΩ, with a typical ratio of 10. The device operates within a junction temperature range up to 150 °C and features a thermal resistance from junction to ambient of 500 K/W.

Feature Summary

  • Integrates built-in bias resistors to simplify circuit design and reduce component count.
  • Provides 500 mA output current capability for switching applications.
  • Maintains ±10% resistor ratio tolerance for consistent performance.

Applications

  • Digital applications in automotive and industrial segments
  • Cost-saving alternative for BC817 series in digital applications
  • Controlling IC inputs
  • Switching loads

Procurement Notes

Verify the specific ordering suffix matches the required packaging format before procurement. Confirm that the application environment does not require automotive qualification, as this specific part number is designated as non-automotive qualified per the product data sheet revision history. Ensure compatibility with standard SOT23 footprint dimensions during PCB layout planning.

Selection Notes

Select this component when a compact NPN solution with integrated biasing is required for general-purpose switching. The SOT23 package offers space efficiency compared to through-hole alternatives. Consider the 50 V breakdown voltage and 500 mA current limit against load requirements. Verify that the non-automotive qualification status aligns with the target industry standards.

Part Context

The PDTD113ZT belongs to the PDTD113 family of NPN resistor-equipped transistors. It serves as the SOT23 packaged variant within this series. The PNP complement for this device is the PDTB113ZT. This component type is designed to replace discrete resistor-transistor networks in digital logic interfaces.

Replacement Considerations

The PDTB113ZT is the documented PNP complement. For equivalent functionality in different packages, consider the PDTD113ET or PDTD113ZU variants, ensuring pinout and resistor values match the design requirements.

PDTD113ZT,215PDTD113ZT,215
$0.22
Buy Now