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The PDTD113ZT is an NPN Resistor-Equipped Transistor (RET) manufactured by Nexperia USA Inc. It integrates a transistor with built-in bias resistors in a SOT23 surface-mounted package. Key electrical parameters include a collector-emitter voltage of 50 V, an output current capability of 500 mA, and a total power dissipation of 250 mW. The internal resistor configuration consists of R1 at 1 kΩ and R2 at 10 kΩ, with a typical ratio of 10. The device operates within a junction temperature range up to 150 °C and features a thermal resistance from junction to ambient of 500 K/W.
Verify the specific ordering suffix matches the required packaging format before procurement. Confirm that the application environment does not require automotive qualification, as this specific part number is designated as non-automotive qualified per the product data sheet revision history. Ensure compatibility with standard SOT23 footprint dimensions during PCB layout planning.
Select this component when a compact NPN solution with integrated biasing is required for general-purpose switching. The SOT23 package offers space efficiency compared to through-hole alternatives. Consider the 50 V breakdown voltage and 500 mA current limit against load requirements. Verify that the non-automotive qualification status aligns with the target industry standards.
The PDTD113ZT belongs to the PDTD113 family of NPN resistor-equipped transistors. It serves as the SOT23 packaged variant within this series. The PNP complement for this device is the PDTB113ZT. This component type is designed to replace discrete resistor-transistor networks in digital logic interfaces.
The PDTB113ZT is the documented PNP complement. For equivalent functionality in different packages, consider the PDTD113ET or PDTD113ZU variants, ensuring pinout and resistor values match the design requirements.