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The PDTD113ZTVL is an NPN Resistor-Equipped Transistor (RET) manufactured by Nexperia USA Inc., housed in a SOT23 surface-mount package. It integrates bias resistors R1 and R2, with nominal values of 1 kΩ and 10 kΩ respectively. The device supports a collector-emitter voltage (VCEO) of 50 V and an output current (IO) of 500 mA. Key electrical characteristics include a DC current gain (hFE) of 70 at IC = 50 mA and VCE = 5 V, and a maximum collector-emitter saturation voltage (VCEsat) of 300 mV at IC = 50 mA. Total power dissipation is rated at 250 mW.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as reel size or tape type. Confirm that the non-automotive qualified status aligns with the intended application requirements, as this product lacks automotive qualification testing.
Select this component when a compact NPN switching solution with integrated biasing is required. Ensure the 50 V voltage rating and 500 mA current capability meet the load requirements. Verify that the SOT23 package dimensions fit the available PCB space and that the thermal resistance characteristics are sufficient for the operating environment.
This part belongs to the PDTD113ZT family of NPN resistor-equipped transistors. The 'VL' suffix typically denotes a specific packaging variant, such as volume reel configuration, within the standard PDTD113ZT product line. The PNP complement for this device is the PDTB113ZT.
Direct replacements must match the NPN RET configuration, SOT23 package, and electrical ratings. Consider the PDTB113ZT for complementary PNP needs. Verify pinout compatibility and resistor ratios when substituting with other RET families.